Method of maintaining the state of semiconductor memory having electrically floating body transistor

ABSTRACT

Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.

CROSS-REFERENCE

This application is a continuation application of co-pending applicationSer. No. 13/478,014, filed May 22, 2012, which is a continuationapplication of application Ser. No. 13/244,855, filed Sep. 26, 2011, nowU.S. Pat. No. 8,208,302, which is a continuation application ofapplication Ser. No. 12/797,334, filed Jun. 9, 2010, now U.S. Pat. No.8,130,547, which is a continuation-in-part application of applicationSer. No. 12/552,903, filed Sep. 2, 2009, now U.S. Pat. No. 8,194,451,which is a continuation-in-part application of application Ser. No.11/998,311, filed Nov. 29, 2007, now U.S. Pat. No. 7,760,548 and acontinuation-in-part application of application Ser. No. 12/533,661,filed Jul. 31, 2009, now U.S. Pat. No. 8,077,536, and acontinuation-in-part application of application Ser. No. 12/545,623,filed Aug. 21, 2009, now U.S. Pat. No. 8,159,868, and which claims thebenefit of U.S. Provisional Application No. 61/093,726, filed Sep. 3,2008, and U.S. Provisional Application No. 61/094,540, filed Sep. 5,2008. We hereby incorporate all of the aforementioned applicationsherein, in their entireties, by reference thereto, and we claim priorityto application Ser. Nos. 13/478,014; 13/244,855; 12/797,334; 12/552,903;11/998,311; 12/533,661 and 12/545,623, under 35 USC §120, and toApplication Ser. Nos. 61/093,726 and 61/094,540 under 35 USC §119.

This application claims the benefit of U.S. Provisional Application No.61/309,589, filed Mar. 2, 2010, which application is hereby incorporatedherein, in its entirety, by reference thereto and to which applicationwe claim priority under 35 U.S.C. Section 119.

This application also hereby incorporates, in its entirety by referencethereto, Application Serial No. (application Ser. No. 12/797,320), filedconcurrently herewith and titled “Semiconductor Memory HavingElectrically Floating Body Transistor”.

FIELD OF THE INVENTION

The present invention relates to semiconductor memory technology. Morespecifically, the present invention relates to methods of maintainingthe state of semiconductor memory device/array of devices having anelectrically floating body transistor.

BACKGROUND OF THE INVENTION

Semiconductor memory devices are used extensively to store data. Staticand Dynamic Random Access Memory (SRAM and DRAM, respectively) arewidely used in many applications. SRAM typically consists of sixtransistors and hence has a lame cell size. However, unlike DRAM, itdoes not require periodic refresh operations to maintain its memorystate. Conventional DRAM cells consist of a one-transistor andone-capacitor (1T/1C) structure. As the 1T/1C memory cell feature isbeing scaled, difficulties arise due to the necessity of maintaining thecapacitance value.

DRAM based on the electrically floating body effect has been proposed(see for example “A Capacitor-less 1T-DRAM Cell”, S. Okhonin et al., pp.85-87. IEEE Electron Device Letters, vol. 23, no, 2. February 2002 and“Memory Design Using One-Transistor Gain Cell on SOI”, T. Ohsawa et al.,pp. 152-153, Tech. Digest, 2002 IEEE International Solid-State CircuitsConference, February 2002). Such memory eliminates the capacitor used inthe conventional 1T/1C memory cell, and thus is easier to scale tosmaller feature size. In addition, such memory allows for a smaller cellsize compared to the conventional 1T/1C memory cell. However, unlikeSRAM, such DRAM memory cell still requires refresh operation, since thestored charge leaks over time.

A conventional 1T/1C DRAM refresh operation involves first reading thestate of the memory cell, followed by re-writing the memory cell withthe same data. Thus this read-then-write refresh requires twooperations: read and write. The memory cell cannot be accessed whilebeing refreshed. An “automatic refresh” method”, which does not requirefirst reading the memory cell state, has been described in Fazan et al.,U.S. Pat. No. 7,170,807. However, such operation still interrupts accessto the memory cells being refreshed.

In addition, the charge in a floating body DRAM memory cell decreasesover repeated read operations. This reduction in floating body charge isdue to charge pumping, where the floating body charge is attracted tothe surface and trapped at the interface (see for example “Principles ofTransient Charge Pumping on Partially Depleted SOI MOSFETs”, S. Okhonin,et al., pp. 279-281. IEEE Electron Device Letters, vol. 23, no 5, May2002).

Thus there is a continuing need for semiconductor memory devices andmethods of operating such devices such that the states of the memorycells of the semiconductor memory device are maintained withoutinterrupting the memory cell access.

There is also a need for semiconductor memory devices and methods ofoperating the same such that the states of the memory cells aremaintained upon repeated read operations.

The present invention meets the above needs and more as described indetail below.

SUMMARY OF THE INVENTION

In one aspect of the present invention, a method of maintaining a stateof a memory cell without interrupting access to the memory cell isprovided, including: applying a back bias to the cell to offset chargeleakage out of a floating, body of the cell, wherein a charge level ofthe floating body indicates a state of the memory cell, and accessingthe cell.

In at least one embodiment, the applying comprises applying the backbias to a terminal of the cell that is not used tier address selectionof the cell.

In at least one embodiment, the back bias is applied as a constantpositive voltage bias.

In at least one embodiment, the back bias is applied as a periodic,pulse of positive, voltage.

In at least one embodiment, a maximum potential that can be stored inthe floating body is increased by the application of back bias to thecell, resulting in a relatively larger memory window.

In at least one, embodiment, the application of back bias performs aholding operation on the cell, and the method further comprisessimultaneously performing a read operation on the cell at the same timethat the holding operation is being performed.

In at least one embodiment, the cell is a multi-level cell, wherein thefloating body is configured to indicate more than one state by storingmulti-bits, and the method further includes monitoring, cell currentlithe cell to determine a state of the cell.

In another aspect of the present invention, a method of operating amemory arm having rows and columns of memory cells assembled into anarray of the memory cells is provided, wherein each memory cell has afloating body region for storing data; the method, including: performinga holding operation on at least all of the cells not aligned in a row orcolumn of a selected cell; and accessing the selected cell andperforming a read or write operation on the selected cell whileperforming the hold operation on the at least all of the cells notaligned in a row or column of the selected cell.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells and theperforming a read or write operation comprises performing a readoperation on the selected cell.

In at least one embodiment, the holding operation is performed byapplying back bias to a terminal not used for memory address selection.

In at least one embodiment, the terminal is segmented to allowindependent control of the applied back bias to a selected portion ofthe memory array.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells exceptfor the selected, cell, and the performing a read or write operationcomprises performing a write “0” operation on the selected cell, whereina write “0” operation is also performed on all of the cells sharing, itcommon source line terminal with the selected cell during the performinga write“0” operation.

In at least one embodiment, an individual bit write “0” operation isperformed, wherein the performing, a holding operation comprisesperforming the holding operation on all of the cells except for theselected cell, while the performing a read or write operation comprisesperforming a write “0” operation on the selected cell.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells exceptfor the selected cell while the performing, a read or write operationcomprises performing a write “1” operation on the selected cell.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells exceptfor the selected cell while the performing a read or write operationcomprises performing a multi-level write operation on the selected cell,using an alternating write and verify algorithm.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells exceptfor the selected cell while the performing a read or write operationcomprises performing a multi-level write operation on the selected cell,wherein the multi-level write operation includes, ramping a voltageapplied to the selected cell to perform the write operation; reading,the state of the selected cell by monitoring a change in current throughthe selected cell; and removing the ramped voltage applied once thechange in cell current reaches a predetermined value.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells exceptfor the selected cell while the performing a read or write operationcomprises performing, a multi-level write operation on the selectedcell, wherein the multi-level write operation includes: ramping acurrent applied to the selected cell to perform the write operation;reading the state of the selected cell by monitoring a change in voltageacross a bit, line and a source line of the selected cell; and removingthe ramped current applied once the change in cell voltage reaches apredetermined value.

In at least one embodiment the multi-level write operation permitsbit-level selection of a bit portion of memory of the selected cell.

In at least one embodiment, the performance of a holding operationcomprises performing the holding operation on all of the cells exceptfor the selected cell while the performing a read or write operationcomprises performing a single-level or multi-level write operation onthe selected cell wherein the single-level and each level of themulti-level write operation includes: ramping a voltage applied to theselected cell to perform the write operation; reading the state of theselected cell by monitoring a change in current toward an addressableterminal of the selected cell, and verifying a state of the writeoperation using a reference memory cell.

In at least one embodiment, the method further includes configuring astate of the reference memory cell using a write-then-verify operation,prior to performing the write operation.

In at least one embodiment, configuring a state of the reference memorycell comprises configuring the state upon power up of the memory array.

In another aspect of the present invention, a method of operating amemory array having rows and columns of memory cells assembled into anarray of the memory cells is provided, wherein each memory cell has afloating body region for storing data; and wherein the method includes:refreshing, a state of at least one of the memory cells; and accessingat least one other of the memory cells, wherein access of the at leastone other of the memory cells in not interrupted by the refreshing, andwherein the refreshing is performed without alternating read and writeoperations.

In at least one embodiment, at least one of the memory cells is amulti-level memory cell.

In another aspect of the present invention, a method of operating, tomemory array having rows and columns of memory cells assembled into anarray of the memory cells is provided, wherein each memory cell has afloating, body region for storing data; and wherein the method includes:accessing a selected memory cell from the memory cells; and performing asimultaneous write and verify operation on the selected memory cellwithout performing an alternating write and read operation.

In at least one embodiment, the selected memory cell is a multi-levelmemory cell.

In at least one embodiment, a verification portion of the write andverify operation is performed by sensing a current change in the columndirection of the array in a column that the selected cell is connectedto.

In at least one embodiment, a verification portion of the write andverify operation is performed by sensing a current change in the rowdirection of the array in a row that the selected cell is connected to.

In at least one embodiment, a write portion of the write and verifyoperation employs use of a drain of gate voltage ramp.

In at least one embodiment, a write portion of the write and verifyoperation employs use of a drain current ramp.

These and other features of the invention will become apparent to thosepersons skilled in the art upon reading the details of the methods,devices and arrays as more fully described below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic illustration of a memory cell according to anembodiment of the present invention.

FIG. 1B is a schematic illustration of a memory cell according to anembodiment of the present invention showing, a contact to the substrateregion.

FIG. 2 schematically illustrates multiple cells joined in an array tomake a memory device according to an embodiment of the presentinvention.

FIG. 3 schematically illustrates n-p-n bipolar devices that areinherently formed in a memory cell according to an embodiment of thepresent invention.

FIG. 4A illustrates segmenting of substrate terminals in an arrayaccording to an embodiment of the present invention.

FIG. 4B schematically illustrates multiplexers used to determine thebiases applied to segmented substrate terminals according to anembodiment of the present invention.

FIG. 4C schematically illustrates use of a voltage generator circuitriesto input positive bias to the multiplexers according to an embodiment ofthe present invention.

FIG. 5 graphically illustrates that the maximum charge stored in afloating body of a memory cell can be increased by applying a positivebias to the substrate terminal according to an embodiment of the presentinvention.

FIG. 6A graphs floating, body potential as a function of floating bodycurrent and substrate potential according to an embodiment of thepresent invention.

FIG. 6B graphs floating body potential as a function of floating bodycurrent and buried well potential according, to an embodiment of thepresent invention.

FIG. 7 shows bias conditions for a selected memory cell and unselectedmemory cells in a memory array according to an embodiment of the presentinvention.

FIG. 8A illustrates an unselected memory cell sharing the same row as aselected memory cell during a read operation of the selected memory cellaccording to an embodiment of the present invention.

FIG. 8B illustrates the states of the n-p-n bipolar devices of theunselected memory cell of FIG. 8A during the read operation of theselected memory cell according to the embodiment of FIG. 8A.

FIG. 8C illustrates an unselected memory cell sharing the same column asa selected memory cell during a read operation of the selected memorycell according to the embodiment of FIG. 8A.

FIG. 8D illustrates the states of the n-p-n bipolar devices of theunselected memory cell of FIG. 8C during the read operation of theselected memory cell according to the embodiment of FIG. 8A.

FIG. 8E illustrates an unselected memory cell that shares neither thesame row nor the same column as a selected memory cell during a readoperation of the selected memory cell according, to the embodiment ofFIG. 8A.

FIG. 8F illustrates the states of the n-p-n bipolar devices of theunselected memory cell of FIG. 8E during the read operation of theselected memory cell according to the embodiment of FIG. 8A.

FIG. 9 is a schematic illustration of a write “0” operation to a memorycell according to an embodiment of the present invention.

FIG. 10 shows an example of bias conditions for a selected memory celland unselected memory cells during a write “0” operation in a memoryarray according to an embodiment of the present invention.

FIG. 11A illustrates an example of bias conditions on unselected memorycells during a write “0” operation according to an embodiment of thepresent invention.

FIG. 11B shows an equivalent circuit diagram for the cell of FIG. 11Aillustrating the intrinsic n-p-n bipolar devices.

FIG. 12 shows bias conditions for selected and unselected memory cellsof a memory array during a write “0” operation according to anembodiment of the present invention.

FIG. 13A illustrates an example of bias conditions on a selected memorycell during a write “0” operation according to an embodiment of thepresent invention.

FIG. 13B shows an equivalent circuit diagram for the cell of FIG. 13Aillustrating the intrinsic n-p-n bipolar devices.

FIG. 13C illustrates an example of bias conditions on unselected memorycells sharing the same row as a selected memory cell in an array duringa write “0” operation of the selected memory cell, according to theembodiment of FIG. 13A.

FIG. 13D shows an equivalent circuit diagram for the cell of FIG. 13Cillustrating the intrinsic n-p-n bipolar devices.

FIG. 13E illustrates an example of bias conditions on unselected memorycells sharing the same column as a selected memory cell in an arrayduring a write “0” operation of the selected memory cell, according tothe embodiment of FIG. 13A.

FIG. 13F shows an equivalent circuit diagram for the cell ofillustrating the intrinsic n-p-n bipolar devices.

FIG. 13G illustrates an example of bias conditions on unselected memorycells that share neither the same row nor the same column as a selectedmemory cell in an array during a write “0” operation of the selectedmemory cell, according to the embodiment of FIG. 13A.

FIG. 13H shows an equivalent circuit diagram for the cell of FIG. 13Gillustrating the intrinsic n-p-n bipolar devices.

FIG. 14 illustrates an example of bias conditions of a selected memorycell and unselected memory cells in an array tinder a band-to-bandtunneling write “1” operation of the selected cell according to anembodiment of the present invention.

FIG. 15A illustrates an example of bias conditions on the selectedmemory cell of FIG. 14

FIG. 15B shows an equivalent circuit diagram for the cell of FIG. 15Aillustrating the intrinsic n-p-n bipolar devices.

FIG. 15C illustrates an example of bias conditions on unselected memorycells sharing the same row as a selected memory cell in an array duringa write “1” operation of the selected memory cell, according to theembodiment of FIG. 15A.

FIG. 15D shows an equivalent circuit diagram for the cell of FIG. 15Cillustrating the intrinsic n-p-n bipolar devices.

FIG. 15E illustrates an example of bias conditions on unselected memorycells sharing the same column as a selected memory cell in an arrayduring a write “1” operation of the selected memory cell, according tothe embodiment of FIG. 15A.

FIG. 15F shows an equivalent circuit diagram for the cell of FIG. 13illustrating the intrinsic n-p-n bipolar devices.

FIG. 15G illustrates an example of bias conditions on unselected memorycells that share neither the same row nor the same column as a selectedmemory cell in an array during a write “1” operation of the selectedmemory cell, according to the embodiment of FIG. 15A.

FIG. 15H shows an equivalent circuit diagram for the cell of FIG. 15Gillustrating the intrinsic n-p-n bipolar devices.

FIG. 16A shows a reference generator circuit which serves to generatethe initial cumulative cell current of the memory cells sharing the samesource line being written, according to an embodiment of the presentinvention.

FIG. 16B shows a reference generator circuit which serves to generatethe initial cumulative cell current of the memory cells sharing the samesource line being written, according to another embodiment of thepresent invention.

FIG. 16C shows a reference generator circuit which serves to generatethe initial cumulative cell current of the memory cells sharing the samesource line being written, according to another embodiment of thepresent invention.

FIG. 17 graphically illustrates that the potential of the floating bodyof a memory cell will increase over time as bias conditions are appliedthat will result in hole injection to the floating body, according to anembodiment of the present invention.

FIG. 18A schematically illustrates reference generator circuitry andread circuitry connected to a memory array according to an embodiment,of the present invention.

FIG. 18B shows a schematic of a voltage sensing circuitry configured tomeasure the voltage across the source line and the bit line terminals ofa memory cell according to an embodiment of the present invention.

FIG. 19 illustrates bias conditions on a selected cell and unselectedcells of an array during a read operation on the selected cell accordingto an embodiment of the present invention.

FIG. 20 illustrates bias conditions on a selected cell and unselectedcells of an array during a write “0” operation on the selected cellaccording to an embodiment of the present invention.

FIG. 21 illustrates bias conditions on a selected cell and unselectedcells of an array during a write “0” operation on the selected cellaccording to another embodiment of the present invention.

FIG. 22 illustrates bias conditions on a selected cell and unselectedcells of an array during a band-to-band tunneling write “1” operation onthe selected cell according to another embodiment of the presentinvention.

FIG. 23A is a schematic illustration of a memory cell according, toanother embodiment of the present invention.

FIG. 23B is a schematic illustration of a memory cell according toanother embodiment of the present invention showing contacts to theburied well and substrate regions.

FIG. 24 schematically illustrates an array of memory cells of the typeillustrated in FIG. 23.

FIG. 25 schematically illustrates n-p-n bipolar devices inherent in thecell of FIG. 23.

FIG. 26 illustrates an example of bias conditions on a array duringperformance of a read operation on a selected cell according to anembodiment of the present invention.

FIG. 27 illustrates bias conditions on a selected cell and unselectedcells of an array during a write “0” operation on the selected cellaccording to an embodiment of the present invention.

FIG. 28A illustrates an example of bias conditions the selected memorycell of FIG. 27.

FIG. 28B shows an equivalent circuit diagram for the cell of FIG. 28Aillustrating the intrinsic n-p-n bipolar devices.

FIG. 28C illustrates an example of bias conditions on unselected memorycells sharing the same row as a selected memory cell in an array duringa write “0” operation of the selected memory cell, according to theembodiment of FIG. 27.

FIG. 28D shows an equivalent circuit diagram for the cell of FIG. 28Cillustrating the intrinsic n-p-n bipolar devices.

FIG. 28E, illustrates an example of bias conditions on unselected memorycells sharing the same column as a selected memory cell in an arrayduring a write “0” operation of the selected memory cell, according, tothe embodiment of FIG. 27.

FIG. 28F shows an equivalent circuit diagram for the cell of FIG. 28Eillustrating the intrinsic n-p-n bipolar devices.

FIG. 25G illustrates an example of bias conditions on unselected memorycells that share neither the same row nor the same column as a selectedmemory cell in an array during a write “0” operation of the selectedmemory cell, according to the embodiment of FIG. 27.

FIG. 28H shows an equivalent circuit diagram for the cell of FIG. 28Gillustrating the intrinsic n-p-n bipolar devices.

FIG. 29 illustrates an example of bias conditions applied to a selectedmemory cell under a band-to-band tunneling write “1” operation accordingto an embodiment of the present invention.

FIG. 30 is a schematic illustration of a memory cell according toanother embodiment of the present invention.

FIG. 31 is a schematic illustration of a memory cell according toanother embodiment of the present invention.

FIG. 32 is a schematic illustration of a memory cell according toanother embodiment of the present invention.

FIG. 33 is a schematic illustration of a memory cell according toanother embodiment of the present invention.

FIG. 34 is a top view, schematic illustration of a memory cell of FIGS.30 and 32.

DETAILED DESCRIPTION OF THE INVENTION

Before the present systems, devices and methods are described, it is tobe understood that this invention is not limited to particularembodiments described, as such may, of course vary. It is also to beunderstood that the terminology used herein is for the purpose ofdescribing particular embodiments only, and is not intended to belimiting, since the scope of the present invention will be limited onlyby the appended claims.

Where a range of values is provided, it is understood that eachintervening value, to the tenth of the unit of the lower limit unlessthe context clearly dictates otherwise, between the upper and lowerlimits of that range is also specifically disclosed. Each smaller rangebetween any stated value or intervening value in a stated range and anyother stated or intervening value in that stated range is encompassedwithin the invention. The upper and lower limits of those smaller rangesmay independently be included or excluded in the range, and each rangewhere either, neither or both limits are included in the smaller rangesis also encompassed within the invention, subject to any specificallyexcluded limit in the stated range. Where the stated range includes oneor both of the limits, ranges excluding either or both of those includedlimits are also included in the invention.

Unless defined otherwise, all technical and scientific terms used hereinhave the same moaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. Although any methods andmaterials similar or equivalent to those described herein can be used inthe practice or testing of the present invention, the preferred methodsand materials are now described. All publications mentioned herein areincorporated herein by reference to disclose and describe the methodsand/or materials in connection with which the publications are cited.

It must be noted that as used herein and in the appended claims, thesingular forms “a”, “an”, and “the” include plural referents unless thecontext clearly dictates otherwise. Thus, for example, reference to “acell” includes a plurality of such cells and reference to “the terminal”includes reference to one or more terminals and equivalents thereofknown to those skilled in the art, and so forth.

The publications discussed herein are provided solely for theirdisclosure prior to the filing date of the present application. Nothingherein is to be construed as an admission that the present invention isnot entitled to antedate such publication by virtue of prior invention.Further, the dates of publication provided may be different from theactual publication dates which may need to be independently confirmed.

DEFINITIONS

A “holding operation”, “standby operation” or “holding/standbyoperation”, as used herein, refers to a process of sustaining a state ofa memory cell by maintaining the stored charge. Maintenance of thestored charge may be facilitated by applying, a back bias to the cell ina manner described herein.

A “a multi-level write operation” refers to a process that includes anability to write more than more than two different states into a memorycell to store more than one bit per cell.

A “write-then-verify” algorithm or operation refers to a process wherealternating write and read operations to a memory cell are employed toverify whether a desired memory state of the memory cell has beenachieved during the write operation.

A “read verify operation” refers to a process where a read operation isperformed to verify whether a desired memory state of a memory cell hasbeen achieved.

A “read while programming” operation refers to a process wheresimultaneous write and read operations can be performed to write amemory cell state.

A “back bias terminal” refers to a terminal at the hack side of asemiconductor transistor device, usually at the opposite side of thegate of the transistor. A back bias terminal is also commonly referredto as a “back gate terminal”. Herein, the back bias terminal refers tothe substrate terminal or the buried well terminal, depending upon theembodiment being described.

The term “back bias” refers to a voltage applied to a back biasterminal.

DETAILED DESCRIPTION

Referring now to FIG. 1, a memory cell 50 according to an embodiment ofthe present invention is shown. The cell 50 includes a substrate 12 of afirst conductivity type, such as f-type conductivity typo, for example.Substrate 12 is typically made of silicon, but may comprise germanium,silicon germanium, gallium arsenide, carbon nanotubes, or othersemiconductor materials known in the art. The substrate 12 has a surface14. A first region 16 having a first conductivity type, such as n-typefor example, is provided in substrate 12 and which is exposed at surface14. A second region 18 having, the first conductivity type is alsoprovided in substrate. 12, which is exposed at surface 14 and which isspaced apart from the first region 16. First and second regions 16 and18 are formed by an implantation process formed on the material makingup substrate 12, according to an of implantation processes known andtypically used in the art. Alternatively a solid state diffusion processcan be used to form first and second regions 16 and 18.

A floating body region 24 having a second conductivity type differentfrom the first conductivity type, such as p-type conductivity type whenthe first conductivity type is m-type conductivity type, is bounded bysurface 14, first and second regions 16, 18, insulating layers 26, andsubstrate 12. The floating body region 2.4 can be formed by animplantation process formed on the material making up substrate 12, orcan be grown epitaxially. Insulating layers 26 (e.g. shallow trenchisolation (STI)), may be made of silicon oxide, for example. Insulatinglayers 26 insulate cell 50 from neighboring cells 50 when multiple cells50 are joined in an array 80 to make a memory device as illustrated inFIG. 2. A gate 60 is positioned in between the regions 16 and 18, andabove the surface 14. The gate 60 is insulated from surface 14 by aninsulating layer 62. Insulating layer 62 may be made of silicon oxideand/or other dielectric materials, including high-K dielectricmaterials, such as, but not limited to, tantalum peroxide, titaniumoxide, zirconium oxide, hafnium oxide, and/or aluminum oxide. The gate60 may be made of polysilicon material or metal mite electrode, such astungsten, tantalum, titanium and their nitrides.

Cell 50 further includes word line (WL) terminal 70 electricallyconnected to gate 60, source line (SL) terminal 72 electricallyconnected to one of regions 16 and 18 (connected to 16 as shown, butcould, alternatively, be connected to 18), bit line (BL) terminal 74electrically connected to the other of regions 16 and 18 (connected to18 as shown, but could, alternatively, be connected to 16 when 72 isconnected to 18), and substrate terminal 78 electrically connected tosubstrate 12. Contact to substrate region can alternatively be madethrough region 20 having to first conductivity type, and which iselectrically connected to substrate region 12, as shown in FIG. 1B.

In another embodiment, the memory cell 50 has a p-type conductivity typeas the first conductivity type and n-type conductivity type as thesecond conductivity type, as noted above.

The operation of a memory cell 50 has been described for example in“Scaled 1T-Bulk Devices Built with CMOS 90 nm Technology for Low-costeDRAM Applications”, R. Ranica, et al., pp. 38-41, Tech. Digest,Symposium on VLSI Technology, 2005, which is hereby incorporated herein,in its entirety, by reference thereto. The memory cell states arerepresented by the charge in the floating, body 24. If cell 50 has holesstored in the floating, body region 24, then the memory cell 50 willhave a lower threshold voltage (gate voltage where transistor is turnedon) compared to when cell 50 does not store holes in floating bodyregion 24.

The positive charge stored in the floating body region 24 will decreaseover time due to the p-n diode leakage formed by floating body 24 andregions 16, 18, and substrate 12 and due to charge recombination. Aunique capability of the invention is the ability to perform the holdingoperation in parallel to all memory cells 50 of the array 80. Theholding operation can be performed by applying a positive back bias tothe substrate terminal 78 while grounding terminal 72 and/or terminal74. The positive back bias applied to the substrate terminal willmaintain the state of the memory cells 50 that it is connected to. Theholding operation is relatively independent of the voltage applied toterminal 70. As shown in FIG. 3, inherent in the memory cell 50 aren-p-n bipolar devices 30 a and 30 b formed by substrate region 12,floating body 24, and SL and BL regions 16, 18. If floating body 24 ispositively charged (i.e., in a state “1”), the bipolar transistor 30 aformed by SL region 16, floating body 24, and substrate region 12 andbipolar transistor 30 b formed by BL region 18, floating body 24, andsubstrate region 12 will be turned on.

A fraction of the bipolar transistor current will then flow intofloating region 24 (usually referred to as the base current) andmaintain the state “1” data. The efficiency of the holding operation canbe enhanced by designing the bipolar device formed by substrate 12,floating region 24, and regions 16, 18 to be a low-gain bipolar device,where the bipolar gain is defined as the ratio of the collector currentflowing out of substrate terminal 7$ to the base current flowing intothe floating, region 24.

For memory cells in state “0” data, the bipolar devices 30 a, 30 b willnot be turned on, and consequently no base hole current will flow intofloating region 24. Therefore, memory cells in state “0” will remain instate “0”.

As can be seen, the holding operation can be performed in mass, parallelmanner as the substrate terminal 78 (e.g., 78 a, 78 b, . . . , 78 n) istypically shared by all the cells 50 in the memory array 80. Thesubstrate terminal 78 can also be segmented to allow independent controlof the applied bias on the selected portion of the memory array as shownin FIG. 4A, where substrate terminal 78 a, 78 b is shown segmented fromsubstrate terminal 78 m, 78 n, for example. Also, because substrateterminal 78 is not used for memory address selection, no memory cellaccess interruption occurs due to the holding operation.

In another embodiment, a periodic pulse of positive voltage can beapplied to substrate terminal 78, as opposed to applying a constantpositive bias, in order to reduce the power consumption of the memorycell 50. The state of the memory cell 50 can be maintained by refreshingthe charge stored in floating body 24 during the period over which thepositive voltage pulse is applied to the back bias terminal (i.e.,substrate terminal 78). FIG. 4B further shows multiplexers 40 thatdetermine, the bias applied to substrate terminal 78 where the controlsignal could be the clock signal 42 or as will be described later,determined by different operating modes. The positive input signalscould be the power supply voltage Vcc (FIG. 4B) or a different positivebias could be generated by voltage generator circuitry 44 (see FIG. 4C).

The holding/standby operation also results in as larger memory window byincreasing the amount of charge that can be stored in the floating, body24. Without the holding/standby operation, the maximum potential thatcan be stored in the floating body 24 is limited to the flat bandvoltage V_(FB) as the junction leakage current to regions 16 and 18increases exponentially at floating body potential greater than V_(FB).However by applying a positive voltage to substrate terminal 78, thebipolar action results in a hole current flowing into the floating, body24, compensating for the junction leakage current between floating body24 and regions 16 and 18. As a result, the maximum charge V_(MC) storedin floating body 24 can be increased by applying a positive bias to thesubstrate terminal 78 as shown in FIG. 5. The increase in the maximumcharge stored in the floating body 24 results in a larger memory window.

The holding/standby operation can also be used for multi-bit operationsin memory cell 50. To increase the memory density without increasing thearea occupied by the memory cell 50, a multi-level operation istypically used. This is done by dividing the overall memory window intodifferent levels in floating body memory, the different memory statesare represented by different charges in the floating, body 24, asdescribed for example in “The multistable Charge-Controlled MemoryEffect in SOI Transistors at Low Temperatures”, Tack et al., pp.1373-1382, IEEE Transactions on Electron Devices, vol. 37. May 1990 andU.S. Pat. No. 7,542,345 “Multi-bit memory cell having electricallyfloating, body transistor, and method of programming and reading same”,each of which is hereby incorporated herein, in its entirety, byreference thereto. However, since the state with zero charge in thefloating body 24 is the most stable state, the floating, body 24 will,over time, lose its charge until it reaches the most stable state. Inmulti-level operations, the difference of charge representing differentstates is smaller than that for a single-level operation. As a result, amulti-level memory cell is more sensitive to charge loss, as less chargeloss is required to change states.

FIG. 6 shows the floating hod 24 relative net current for differentfloating body 24 potentials as a function of the voltage applied tosubstrate terminal 78 with BL, SL, and WL terminals 72, 74, and 70,grounded. When zero voltage is applied to substrate terminal 78, nobipolar current is flowing into the floating body 24 and as a result,the stored charge will leak over time. When a positive voltage isapplied to substrate terminal 78, hole current will flow into floatingbody 24 and balance the junction leakage current to regions 16 and 18.The junction leakage current is determined by the potential differencebetween the floating body 24 and regions 16 and 18, while the bipolarcurrent flowing into floating body 24 is determined by both thesubstrate terminal 78 potential and the floating body 24 potential. Asindicated in FIG. 6 for different floating body potentials, at a certainsubstrate terminal 78 potential V_(HOLD), the current flowing intofloating body 24 is balanced by the junction leakage between floatingbody 24 and regions 16 and 18. The for fluent floating body 24potentials represent different charges used to represent differentstates of memory cell 50. This shows that different memory states can bemaintained by using the holding/standby operation described here.

An example of the bias condition for the holding operation is herebyprovided: zero voltage is applied to BL terminal 74, zero voltage isapplied to SL terminal 72, zero or negative voltage is applied to WLterminal 70, and a positive voltage is applied to the substrate terminal78. In one particular non-limiting embodiment, about 0.0 volts isapplied to terminal 72, about 0.0 volts is applied to terminal 74, about0.0 volts is applied to terminal 70, and about +1.2 volts is applied toterminal 78. However, these voltage levels may vary.

The charge stored in the floating body 24 can be sensed by monitoringthe cell current of the memory cell 50. If cell 50 is in a state “1”having holes in the floating body region 24, then the memory cell willhave a lower threshold voltage (gate voltage where the transistor isturned on), and consequently a higher cell current, compared to if cell50 is in a state “0” having no holes in floating, body region 24. Asensing circuit/read circuitry 90 typically connected to BL terminal 74of memory array 80 (e.g., see read circuitry 90 in FIG. 18A) can then beused to determine the data state of the memory cell. Examples of theread operation is described in “A Design of a Capacitorless 1T-DRAM CellUsing Gate-Induced Drain Leakage (GIDL) Current for Low-power andHigh-speed Embedded Memory”, and Yoshida et al. pp. 913-918,International Electron Devices Meeting, 2003 and U.S. Pat. No. 7,301,803“Bipolar reading technique for a memory cell having an electricallyfloating body transistor”, both of which are hereby incorporated herein,in their entireties, by reference thereto. An example of a sensing;circuit is described in “An 18.5 ns 128 Mb SOI DRAM with a Floating bodyCell”. Obsawa et al., pp. 458-459, 609, IEEE International Solid-StateCircuits Conference, 2005, which is hereby incorporated herein, in itsentirety, by reference thereto.

The read operation can be performed by applying the following biascondition: a positive voltage is applied to the substrate terminal 78,zero voltage is applied to SL terminal 72, a positive voltage is appliedto the selected BL terminal 74, and a positive voltage greater than thepositive voltage applied to the selected BL terminal 74 is applied tothe selected WE terminal 70. The unselected BL terminals will remain atzero voltage and the unselected terminals will remain at zero ornegative voltage. In one particular non-limiting embodiment, about 0.0volts is applied to terminal 72, about +0.4 volts is applied to theselected terminal 74, about 4-1.2 volts is applied to the selectedterminal 70, and about 4-1.2 volts is applied to terminal 78. Theunselected terminals 74 remain at 0.0 volts and the unselected terminals70 remain at 0.0 volts. FIG. 7 shows the bias conditions for theselected memory cell 50 a and unselected memory cells 50 b, 50 c, and 50d in memory allay 80. However, these voltage levels may vary.

The unselected memory cells 50 during read operations are shown in FIGS.8A, 8C and 8E, with illustration of the states of the n-p-n bipolardevices 30 a, 30 b inherent in the cells 50 of FIGS. 5A, 5C and 5E inFIGS. 8B, 8D and 8E, respectively. The bias conditions for memory cells50 sharing the same row (e.g. memory cell 50 b) and those sharing thesame column (e.g. memory cell 50 c) as the selected memory cell 50 a areshown in FIGS. 8A-8B and FIGS. 8C-8D, respectively, while the biascondition for memory cells 50 not sharing the same row or the samecolumn as the selected memory cell 50 (e.g. memory cell 50 d) is shownin has. 8E-8F.

For memory cells 50 sharing the same row as the selected memory cell,both the SL terminal 72 and BL terminal 74 are at about 0.0 volts (FIGS.8A-8B). As can be seen, these cells will be at holding mode, with memorycells in state “1” and will maintain the charge in floating body 24because the intrinsic n-p-n bipolar devices 30 a, 30 b will generatehole current to replenish the charge in floating body 24; while memorycells 50 in state “0” will remain in the neutral state.

For memory cells 50 sharing the same column as the selected memory cell,a positive voltage is applied to the BL terminal 74 (FIGS. 8C-8D).However, the n-p-n bipolar device 30 a formed by substrate 12, floatingbody 24, and region 16 will still maintain the state of the floatingbody 24 as the SL terminal 72 connected to region 16 is grounded.

For memory cells 50 not sharing the same row or the same column as theselected, memory cell, both the SL terminal 72 and BL terminal 74 are atabout 0.0 volts (FIGS. 8E-8F). As can be seen, these cells will be atholding mode, where memory cells in state “1” will maintain the chargein floating body 24 because the intrinsic n-p-n bipolar devices 30 a, 30b will generate holes current to replenish the charge in floating body24 while memory cells in state “0” will remain in the neutral state.

From the above description, it can be seen that the holding operationdoes not interrupt the read operation of the memory cells 50. At thesame time, the unselected memory cells 50 during a read operation willremain in a holding operation.

Write operations of memory cell 50 are now described. A write “0”operation of the cell 50 is described with reference to FIG. 9. To write“0” to cell 50, a negative bias is applied to SL terminal 72, zero ornegative voltage is applied to WL terminal 70, and zero or positivevoltage is applied to substrate terminal 78. The SL terminal 72 for theunselected cells will remain grounded. Under these conditions, the p-njunction between 24 and 16 is forward-biased, evacuating any holes fromthe floating body 24 in one particular non-limiting embodiment, about−2.0 volts is applied to terminal 72, about 0.0 volts is applied toterminal 70, and about +1.2 volts is applied to terminal 78. However,these voltage levels may vary, while maintaining the relativerelationships between the charges applied, as described above.

FIG. 10 shows an example of bias conditions for the selected andunselected memory cells 50 during a write “0” operation in memory array80. For the selected memory cells, the negative bias applied to SLterminal 72 causes large potential difference between floating body 24and region 16. Even for memory cells having a positively chargedfloating body 24, the hole current generated by the intrinsic n-p-nbipolar devices 30 a, 30 b will not be sufficient to compensate for theforward bias current of p-n diode formed by floating body 24 andjunction 16.

An example of bias conditions and an equivalent circuit diagramillustrating the intrinsic n-p-n bipolar devices 30 a, 30 b ofunselected memory cells 50 during write “0” operations are illustratedin FIGS. 11A-11B. Since the write “0” operation only involves applying anegative voltage to the SL terminal 72, the bias conditions for all theunselected cells are the same. As can be seen, the unselected memorycells will be in a holding operation, with both BL and SL terminals atabout 0.0 volts. The positive back bias applied to the substrateterminal 78 employed for the holding operation does not interrupt thewrite “0” operation of the selected memory cells. Furthermore, theunselected memory cells remain in the holding operation.

The write “0” operation referred to above has a drawback in that allmemory cells 50 sharing the same SL terminal will be written tosimultaneously and as a result, this does not allow individual bitwriting, i.e., writing to a single cell 50 memory hit. To write multipledata to different memory cells 50, write “0” is first performed on allthe memory cells, followed by write “1” operations on a selected bit orselected bits.

An alternative write “0” operation that allows for individual bitwriting can be performed by applying a positive voltage to WL terminal70, a negative voltage to BL terminal 74, zero or positive voltage to SLterminal 72, and zero or positive voltage to substrate terminal 78.Under these conditions, the floating body 24 potential will increasethrough capacitive coupling from the positive voltage applied to the WLterminal 70. As a result of the floating body 24 potential increase andthe negative voltage applied to the BL terminal 74, the p-n junctionbetween 24 and 18 is forward-biased, evacuating any holes from thefloating body 24. To reduce undesired write “0” disturb to other memorycells 50 in the memory array 80, the applied potential can be optimizedas follows: if the floating, body 24 potential of state “1” is referredto as V_(FB1), then the voltage applied to the WL terminal 70 isconfigured to increase the floating body 24 potential by V_(FB1)/2 while−V_(FB1)/2 is applied to BL terminal 74. A positive voltage can beapplied to SL terminal 72 to further reduce the undesired write “0”disturb on other memory cells 50 in the memory array. The unselectedcells will remain at holding state, i.e. zero or negative voltageapplied to WL terminal 70 and zero voltage applied to BL terminal 74.

In one particular non-limiting embodiment, the following bias conditionsare applied to the selected memory cell 50 a: a potential of about 0.0volts is applied to terminal 72, a potential of about −0.2 volts isapplied to terminal 74, a potential of about +0.5 volts is applied toterminal 70, and about +1.2 volts is applied to terminal 78; while about0.0 volts is applied to terminal 72, about 0.0 volts is applied toterminal 74, about 0.0 volts is applied to terminal 70, and about +1.2volts is applied to terminal 78 of the unselected memory cells. FIG. 12shows the bias conditions for the selected and unselected memory cellsin memory array 80. However, these voltage levels may vary.

The bias conditions of the selected memory cell 50 a under write “0”operation are further elaborated and are shown in FIGS. 13A-13B. Asdiscussed, the potential difference between floating body 24 andjunction 18 (connected to BF terminal 74) is now increased, resulting ina higher forward bias current than the base hole current generated bythe n-p-n bipolar devices 30 a, 30 b formed by substrate 12, floatingbody 24, and regions 16 and 18. The net result is that holes will beevacuated from floating body 24.

The unselected memory cells 50 during write “0” operations are shown inFIGS. 13C-13D. The bias conditions for memory cells sharing the same row(e.g. memory cell 50 b) are illustrated in FIGS. 13C-13D, and the biasconditions for memory cells sharing the same column (e.g. memory cell 50c) as the selected memory cell 50 a are shown in FIGS. 13E-13F, whilethe bias conditions for memory cells not sharing the same row or thesame column e.g., memory cell 50 d) as the selected memory cell 50 areshown in FIGS. 13G-13H.

For memory cells sharing the same row as the selected memory cell, boththe SL, terminal 72 and BL terminal 74 are at about 0.0 volts (FIGS. 13Cand 13D). The floating body 24 potential of these cells will alsoincrease due to capacitive coupling from the WL terminal 70. For memorycells in state “1”, the increase in the floating body 24 potential isnot sustainable as the forward bias current of the p-n diodes formed byfloating body 24 and Junctions 16 and 1$ is greater than the base holecurrent generated by the n-p-j bipolar device 30 formed by substrate 12,floating body 24, and junctions 16 and 18. As a result, the floatingbody 24 potential will return to the initial state “1” equilibriumpotential. For memory cells in state “0”, if the increase in floatingbody 24 potential is sufficiently high (i.e., at least V_(Fb)/3, seebelow), then both n-p-n bipolar devices 30 a and 30 b are turned on, andas a result the floating body 24 reaches a new equilibrium potential,between that of state “0” and state “1”. Therefore, the WL potentialneeds to be optimized so that the n-p-n bipolar devices 30 a, 30 b willnot be turned on or that the base hole current is low enough that itdoes not result in an increase of the floating body 24 potential overthe time during, which the write operation is carried out (writeoperation time), it has been determined by the present inventor that afloating body 24 potential increase of V_(FB)/3 is low enough tosuppress the floating body 24 potential increase.

Accordingly, with careful design concerning the voltage applied to WLterminal 70, the states of the unselected memory cells sharing the sameWL terminal (i.e. the same row) as the selected memory cells will bemaintained.

For memory cells sharing the same column as the selected memory cell, anegative voltage is applied to the BL terminal 74 (see FIGS. 13E and13F), resulting in an increase in the potential difference betweenfloating, body 24 and region 18 connected to BL terminal 74. As a resulta higher forward bias current between floating body 24 and junction 18occurs. For memory cells in state “0”, the potential difference betweenfloating body 24 and junction 18 is still sufficiently low that the p-ndiode formed by floating body 24 and junction 18 is still not forwardbiased. Thus those memory cells will remain in state “0”. For memorycells in state “1”, junction leakage caused by forward bias current willincrease. However, the hole current of the f-p-n bipolar device 30 bformed by substrate 12, floating body 24, and region 18 will alsoincrease as a result of the increase in potential difference between thesubstrate 12 and region 18 (the collector and emitter terminals,respectively). Hence, the floating body 24 of memory cells in state “1”will also remain positively charged (i.e., in state “1”.

As to memory cells not sharing the same row or the same column as theselected memory cell, both the SL terminal 72 and BL terminal 74 are atabout 0.0 volts (see FIGS. 13G and 13H). These cells will thus be in aholding mode and continue a holding operation, with memory cells instate “1” maintaining the charge in floating, body 24 because theintrinsic n-p-n bipolar device 30 will generate hole current toreplenish the charge in floating body 24; while memory cells in state“0” will remain in the neutral state.

Accordingly, the present invention provides for a write “0” operationthat allows for bit selection. The positive bias applied to thesubstrate terminal 78 of the memory cells 50 is necessary to maintainthe states of the unselected cells 50, especially those sharing the samerow and column as the selected cells 50, as the bias conditions canpotentially alter the states of the memory cells 50 without theintrinsic bipolar devices 30 a, 30 b (formed by substrate 12, floatingbody 24, and regions 16, 18, respectively) re-establishing theequilibrium condition. Also, the positive bias applied to the substrateterminal 78 employed for the holding operation does not interrupt thewrite “0” operation of the selected memory cell(s)

A write “1” operation can be performed on memory cell 50 through impactionization or band-to-band tunneling mechanism, as described for examplein “A Design of a Capacitorless 1T-DRAM Cell Using Gate-Induced DrainLeakage (GIDL) Current for Low-power and High-speed Embedded Memory”,Yoshida et al., pp. 913-918, International Electron Devices Meeting,2003, which was incorporated by reference above.

An example of the bias condition of the selected memory cell 50 underband-to-band tunneling write “1” operation is illustrated in FIG. 14 andFIGS. 15A-15B. The negative bias applied, to the WL terminal 70 and thepositive bias applied to the BL terminal 74 results in hole injection tothe floating, body 24 of the selected memory cell 50. The positive biasapplied to the substrate terminal 78 maintains the resulting positivecharge on the floating body 24 as discussed above. The unselected cells50 remain at the holding mode, with zero or negative voltage applied tothe unselected WL terminal 70 and zero voltage is applied to theunselected BL terminal 74 to maintain the holding operation (holdingmode).

In one particular non-limiting embodiment, the following bias conditionsare applied to the selected memory cell 50 a: a potential of about 0.0volts is applied to terminal 72, a potential of about +1.2 volts isapplied to terminal 74, a potential of about −1.2 volts is applied toterminal 70, and about +1.2 volts is applied to terminal 78; and thefollowing bias conditions are applied to the unselected memory cells 50:about 0.0 volts is applied to terminal 72, about 0.0 volts is applied toterminal 74, about 0.0 volts is applied to terminal 70, and about +1.2volts is applied to terminal 78. FIG. 14 shows the bias conditions forthe selected and unselected memory cells in memory array 80. Howeverthese voltage levels may vary.

The unselected memory cells during write “1” operations are shown inFIGS. 15C-15D. The bias conditions for memory cells sharing, the samerow (e.g. memory cell 50 b) are shown in FIGS. 15C-15D and the biasconditions for memory cells sharing the same column as the selectedmemory cell 50 a (e.g. memory cell 50 c) are shown in FIGS. 15E-15F. Thebias conditions for memory cells 50 not sharing the same row or the samecolumn as the selected memory cell 50 a (e.g. memory cell 50 d) areshown in FIGS. 15G-15H.

For memory cells sharing the same row as the selected memory cell, boththe SL terminal 72 and BL terminal 74 are at about 0.0 volts, with theWE terminal 70 at zero or negative voltage (FIGS. 15C-15D). Comparingwith the holding operation bias condition, it can be seen that cellssharing the same row (i.e. the same WL terminal 70) are in holding mode.As a result, the states of these memory cells will remain unchanged.

For memory cells sharing the same column as the selected memory cell, apositive voltage is applied to the BL terminal 74. As a result, thebipolar device 30 b formed by substrate 12, floating body 24, and region18 connected to BL terminal 74 will be turned off because of the smallvoltage difference between the substrate terminal 78 and BL terminal 74(the collector and emitter terminals, respectively). However, thebipolar device 30 a formed by substrate 12, floating body 24, and region16 connected to SL terminal 72 will still generate base hole current formemory cells in state “1” having positive, charge in floating body 24.Memory cells in state “0” will remain in state “0” as this bipolardevice 30 a (formed by substrate 12, floating; body 24, and region 16)is off.

For memory cells not sharing the same row or the same column as theselected memory cell, both the SL terminal 72 and BL terminal 74 are atabout 0.0 volts (see FIGS. 15G-15H). As can be seen, these cells will bein a holding operation (holding mode), where memory cells in state “1”will maintain the charge in floating body 24 because the intrinsic n-p-nbipolar devices 30 a, 30 b will generate hole current to replenish thecharge in floating body 24; while memory cells in state “0” will remainin the neutral state.

Thus the positive bias applied to the substrate terminal 78 employed forthe holding operation does not interrupt the write “1” operation of theselected memory cell(s). At the same time, the unselected memory cellsduring write “1” operation will remain in holding operation.

A multi-level write operation can be performed using an alternatingwrite and verify algorithm, where a write pulse is first applied to thememory cell 50, followed by a read operation to verify if the desiredmemory state has been achieved, lithe desired memory state has not beenachieved, another write pulse is applied to the memory cell 50, followedby another read verification operation. This loop is repeated until thedesired memory state is achieved.

For example, using band-to-band tunneling hot hole injection, aspositive voltage is applied to BL terminal 74, zero voltage is appliedto SL terminal 72, a negative voltage is applied to WL terminal 70, anda positive voltage is applied to the substrate terminal 78. Positivevoltages of different amplitude are applied to BL terminal 74 to writedifferent states to floating body 24. This results in different floatingbody potentials 24 corresponding to the different positive voltages orthe number of positive voltage pulses that have been applied to BLterminal 74. By applying positive voltage to substrate terminal 78, theresulting floating body 24 potential is maintained through base holecurrent flowing into floating body 24. In one particular non-limitingembodiment, the write operation is performed applying the following biascondition: a potential of about 0.0 volts is applied to terminal 72, apotential of about −1.2 volts is applied to terminal 70, and about +1.2volts is applied to terminal 78, while the potential applied to BLterminal 74 is incrementally raised. For example, in one non-limitingembodiment 25 millivolts is initially applied to BL terminal 74,followed by as read verify operation. If the read verify operationindicates that the cell current has reached the desired state (i.e.,cell current corresponding, to whichever of 00, 01, 10 or 11 is desiredis achieved), then the multi write operation is commenced. If thedesired state is not achieved, then the voltage applied to BL terminal74 is raised, for example, by another 25 millivolts, to 50 millivolts.This is subsequently followed by another read verify operation, and thisprocess iterates until the desired state is achieved. However, thevoltage levels described may vary. The write operation is followed by aread operation to verify the memory state.

The write-then-verify algorithm is inherently slow since it requiresmultiple write and read operations. The present invention provides amulti-level write operation that can be performed without alternatewrite and read operations. This is accomplished by ramping the voltageapplied to BL terminal 74, while applying zero voltage to SL terminal72, a positive voltage to WL terminal 70, and a positive voltage tosubstrate terminal 78 of the selected memory cells. The unselectedmemory cells will remain in holding mode, with zero or negative voltageapplied to WL terminal 70 and zero voltage applied to BL terminal 74.These bias conditions will result in a hole injection to the floatingbody 24 through impact ionization mechanism. The state of the memorycell 50 can be simultaneously read for example by monitoring the changein the cell current through a read circuitry 90 (FIGS. 16A-16C) coupledto the source line 72. The cell current measured in the source linedirection is a cumulative cell current of all memory cells 50 whichshare the same source line 72 (see FIGS. 16A-16C). As a result, only onememory cell 50 sharing the same source line 72 can be written. Thisensures that the change in the cumulative cell current is a result ofthe write operation on the selected memory cell 50.

As shown in FIG. 17, the potential of the floating body 24 increasesover time as these bias conditions result in hole injection to floatingbody 24 through an impact ionization mechanism. Once the change in cellcurrent reaches the desired level associated with a state of the memorycell 50, the voltage applied to BL terminal 74 can be removed. Byapplying a positive voltage (back bias) to substrate terminal 78, theresulting floating body 24 potential is maintained through base holecurrent flowing into floating body 24, in this manner, the multi-levelwrite operation can be performed without alternate write and readoperations.

FIGS. 16A-16C also show a reference generator circuit 92, which servesto generate the initial cumulative cell current of the memory cells 50sharing the same source line 72 being written. For example, thecumulative charge of the initial state for all memory cells 50 sharing,the same source line 72 can be stored in a capacitor 94 (see FIG. 16B).Transistor 96 is turned on when charge is to be written into or readfrom capacitor 94. Alternatively, a reference cell 50R (FIG. 16C)similar to a memory cell 50 can also be used to store the initial state.Using, a similar principle, a write operation is performed on thereference cell 50R using the cumulative cell current from the sourceline 72. Transistor 96 is turned on when a write operation is to beperformed on the reference cell 50R. A positive bias is also applied tothe substrate of the reference cell to maintain its state. The size ofthe reference cell 50R needs to be configured such that it is able tostore the maximum cumulative charge of all the memory cells 50, i.e.when all of the memory cells 50 sharing, the same source line 72 arepositively charged.

In a similar manner, a multi-level write operation using an impactionization mechanism can be performed by ramping the write currentapplied to BL terminal 74 instead of ramping the BL terminal 74 voltage.

In yet another embodiment, a multi-level write operation can beperformed through a band-to-band tunneling mechanism by ramping thevoltage applied to BL terminal 74, while applying zero voltage to SLterminal 72, a negative voltage to WL terminal 70, and zero or positivevoltage to substrate terminal 78 of the selected memory cells 50. Theunselected memory cells 50 will remain in holding mode, with zero ornegative voltage applied to WL terminal 70 and zero voltage applied toBL terminal 74. Optionally, multiple BL terminals 74 can besimultaneously selected to write multiple cells in parallel. Thepotential of the floating body 24 of the selected memory cell(s) 50 willincrease as a result of the band-to-band tunnel mechanism. The state ofthe selected memory cell(s) 50 can be simultaneously read for example bymonitoring the change in the cell current through a read circuitry 90coupled to the source line. Once the change in the cell current reachesthe desired level associated with a state of the memory cell, thevoltage applied to BL terminal 74 can be removed. If positive voltage isapplied to substrate terminal 78, the resulting floating body 24potential is maintained through base hole current flowing into floatingbody 24. In this manner, the multi-level write operation can beperformed without alternate write and read operations.

Similarly, the multi-level write operation using band-to-band tunnelingmechanism can also be performed by ramping the write current applied toBL terminal 74 instead of ramping the voltage applied to BL terminal 74.

In another embodiment, a read while programming operation can beperformed by monitoring the change in cell current in the hit linedirection through a reading circuitry 90 coupled to the hit line 74 asshown in FIG. 18A. Reference cells 50R representing different memorystates are used to verify the state of the write operation The referencecells SOR can be configured through a write-then-verify operation forexample when the memory device is first powered up.

In the voltage ramp operation, the resulting cell current of the memorycell 50 being written is compared to the reference cell 50R current bymeans of the read circuitry 90. During this read while programmingoperation, the reference cell 50R is also being, biased at the same biasconditions applied to the selected memory cell 50 during the writeoperation. Therefore, the write operation needs to be ceased after thedesired memory state is achieved to prevent altering the state of thereference cell 50R. For the current ramp operation, the voltage at thebit line 74 can be sensed instead of the cell current. The bit linevoltage can be sensed for example using, a voltage sensing circuitry(see FIG. 18B) as described in “VLSI Design of Non-Volatile Memories”,Campardo G. et al., 2005, which is hereby incorporated herein, in itsentirety, reference thereto.

An example of a multi-level write operation without alternate read andwrite operations, using a read while programming operation/scheme in thebit line direction is given where two bits are stored per memory cell50, requiring four states to be storable in each memory cell 50. Withincreasing charge in the floating body 24, the four states are referredto as states “00”, “01”, “10”, and “11”. To program a memory cell 50 toa state “01”, the reference cell 50R corresponding to state “01” isactivated. Subsequently, the bias conditions described above are appliedboth to the selected memory cell 50 and to the “01” reference cell 50R:zero voltage is applied to the source line terminal 72, a positivevoltage is applied to the substrate terminal 78, a positive voltage isapplied to the WL terminal 70 (for the impact ionization mechanism),while the BL terminal 74 is being ramped up, starting from zero voltage.Starting the ramp voltage from a low voltage zero volts) ensures thatthe state of the reference cell 50R does not change.

The voltage applied to the BL terminal 74 is then increased.Consequently, holes are injected into the floating body 24 of theselected cell 50 and subsequently the cell current of the selected cell50 increases. Once the cell current of the selected cell 50 reaches thatof the “01” reference cell, the write operation is stopped by removingthe positive voltage applied to the BL terminal 74 and WL terminal 70.

As was noted above, a periodic pulse of positive voltage can be appliedto substrate terminal 78, as opposed to applying, a constant positivebias, to reduce the power consumption of the memory cell 50. The memorycell 50 operations during the period where the substrate terminal 78 isbeing grounded are now briefly described. During the period when thesubstrate terminal 78 is grounded, the memory cells 50 connected to aground substrate terminal 78 are no longer in holding mode. Thereforethe period during which the substrate terminal is grounded must beshorter than the charge retention time period of the floating body, toprevent the state of the floating body from changing when the substrateterminal is grounded. The charge lifetime (i.e., charge retention timeperiod) of the floating body 24 without use of a holding mode has beenshown to be on the order of milliseconds, for example, see “A ScaledFloating Body Cell (FBC) Memory with High-k+Metal Gate on Thin-Siliconand Thin-BOX for 16-nm Technology Node and Beyond”. Ban et al., pp.92-92. Symposium on VLSI Technology, 2008, which is hereby incorporatedherein, in its entirety, by reference thereto. The state of the memorycell 50 can be maintained by refreshing the charge stored in floatingbody 24 during the period over which the positive voltage pulse isapplied to the back bias terminal substrate terminal 78).

A read operation can be performed by applying the following biasconditions: zero voltage is applied to the substrate terminal 78, zerovoltage is applied to SL terminal 72, a positive voltage is applied tothe selected BL terminal 4, and a positive voltage greater than thepositive voltage applied to the selected BL terminal 74 is applied tothe selected WL terminal 70. The unselected BL terminals 74 will remainat zero voltage and the unselected WL terminals 70 will remain at zeroor negative voltage. If the substrate terminals 78 are segmented (as forexample shown in FIGS. 4A-4C), a positive voltage can be applied to theunselected, substrate terminals 78. In one particular non limitingembodiment, about 0.0 volts is applied to terminal 72, about +0.4 voltsis applied to the selected terminal 74, about +1.2 volts is applied tothe selected terminal 70, and about 0.0 volts is applied to terminal 78.The unselected terminals 74 remain at 0.0 volts and the unselectedterminals 70 remain at 0.0 volts. The unselected terminals 78 (in theease where the substrate terminals 78 are segmented as in FIGS. 4A and4B) can remain at +1.2 volts (see FIG. 19). Because the read operationis carried out over a time period on the order of nanoseconds, it is ofa much shorter duration than the charge lifetime (charge retention timeperiod) of the floating, body 24 unassisted by a holding operation.Accordingly, the performance of a read operation does not affect thestates of the memory cells connected to the terminal 78 as it ismomentarily (on the order of nanoseconds) grounded.

A write “0” operation of the cell 50 can be performed by applying thefollowing bias conditions: a negative bias is applied to SL terminal 72,zero or negative voltage is applied to WL terminal 70, and zero voltageis applied to substrate terminal 78. The SL terminal 72 for theunselected cells will remain grounded. If the substrate terminals 78 aresegmented (as for example shown in FIGS. 4A-4C), a positive voltage canbe applied to the unselected substrate terminals 78. Under theseconditions, the p-n junction between 24 and 16 is forward-biased,evacuating any holes from the floating body 24. In one particularnon-limiting embodiment, about −2.0 volts is applied to terminal 72,about 0.0 volts is applied to terminal 70, and about 0.0 volts isapplied to terminal 78. The unselected terminals 78 (in the case wherethe substrate terminals 78 are segmented as in FIGS. 4A and 413) canremain at +1.2 volts. With the substrate terminal 78 being grounded,there is no bipolar hole current flowing to the floating body 24. As aresult, the write “0” operation will also require less time. Because thewrite “0” operation is brief, occurring over a time period on the orderof nanoseconds, it is of much shorter duration than the charge retentiontime period of the floating body 24, unassisted by a holding operation.Accordingly, the write “0” operation does not affect the states of theunselected memory cells 50 connected to the terminal 78 beingmomentarily grounded to perform the write “0” operation. The biasconditions applied to the memory array 80 are shown in FIG. 20. However,these voltage levels may vary, while maintaining the relativerelationships between the charges applied, as described above.

An example of the bias conditions for an alternative write “0” operationwhich allows for individual bit write is shown in FIG. 21. The followingconditions are applied to selected memory cell 50: a positive voltage toWL terminal 70, a negative voltage to BL terminal 74, zero or positivevoltage to SL terminal 72, and zero voltage to substrate terminal 78.Under these conditions, the floating body 24 potential will increasethrough capacitive coupling from the positive voltage applied to the WLterminal 70. As a result of the floating body 24 potential increase andthe negative voltage applied to the lit, terminal 74, the p-n junctionbetween 2.4 and 18 is forward-biased, evacuating any holes from thefloating body 24. To reduce undesired write “0” disturb to other memorycells in the memory array sharing the same row or column as the selectedmemory cell, the applied potential can be optimized as follows: if thefloating body 24 potential of state “1” is referred to as V_(FB1), thenthe voltage applied to the WL terminal 70 is configured to increase thefloating body 24 potential by V_(FB1)/2 while −V_(FB1)/2 is applied toBL terminal 74. A positive voltage can be applied to SL terminal 72 tofurther reduce the undesired write “0” disturb on other memory cells 50in the memory array that doe not share the same common SL terminal 72 asthe selected memory cell. The unselected cells will remain at holdingstate, i.e. zero or negative voltage applied to WL terminal 70 zerovoltage applied to BL terminal 74, and positive voltage applied tosubstrate terminal 78 (in the case the substrate terminals 78 aresegmented as for example shown in FIGS. 4A-4C). Because the write “0”operation is brief, occurring over a time period on the order ofnanoseconds, it is of much shorter duration than the charge retentiontime period of the floating body 24, unassisted by a holding operation.Accordingly, the write “0” operation does not affect the states of theunselected memory cells 50 connected to the terminal 78 being,momentarily grounded to perform the write “0” operation.

Still referring to FIG. 21, in one, particular non-limiting embodiment,the following bias conditions are applied to the selected memory cell 50a: a potential of about 0.0 volts is applied to terminal 72 a, apotential of about −0.2 volts is applied to terminal 74 a, a potentialof about +0.5 volts is applied to terminal 70 a, and about 0.0 volts isapplied to terminal 78 a; while about 0.0 volts is applied to terminal72 n and the other SL terminals not connected to the selected cell 50 a,about 0.0 volts is applied to terminal 74 n and the other BL terminalsnot connected to the selected cell 50 a, about 0.0 volts is applied toterminal 70 n and the other WL terminals not connected to the selectedcell 50 a, and about +1.2 volts is applied to terminal 78 n and theother substrate terminals not connected to the selected cell 50 a.However, these voltage levels may vary.

An example of the bias conditions applied to the memory array 80 under aband-to-band tunneling write “1” operation to cell 50 a is shown in FIG.22, where a negative bias is applied to WL terminal 70 a, a positivebias is applied to BL terminal 74 a, zero voltage is applied to SLterminal 72 a, and zero voltage is applied to substrate terminal 78 a.The negative bias applied to the WL terminal 70 a and the positive biasapplied to the BL terminal 74 a will result in hole injection to thefloating, body 24 of the selected memory cell 50 a. The unselected cells50 will remain at the holding mode, with zero or negative voltageapplied to the unselected WL terminals 70 (in this case, terminal 70 nand any other WL terminal 70 not connected to selected cell 50 a) andzero voltage is applied to the unselected BL terminals 74 (in this ease,terminals 74 b, 74 n and any other BL terminal 74 not connected toselected cell 50 a) and positive voltage applied to unselected substrateterminals 78 (in the case the substrate terminals 78 are segmented asfor example shown in FIGS. 4A and 4B; and, in FIG. 22, to terminals 78 nand any other substrate terminals 78 not connected to selected cell 50a).

Still referring to FIG. 22, in one particular non-limiting embodiment,the following bias conditions are applied to the selected memory cell 50a: a potential of about 0.0 volts is applied to terminal 72 a, apotential of about +1.2 volts is applied to terminal 74 a, a potentialof about −1.2 volts is applied to terminal 70 a, and about 0.0 volts isapplied to terminal 78 a; while about 0.0 volts is applied to theunselected terminals 72 (defined in the preceding paragraph), about 0.0volts is applied to unselected terminals 74 (defined in the precedingparagraph), about 0.0 volts is applied to unselected terminals 70(defined in the preceding paragraph), and about +1.2 volts is applied tounselected substrate terminals 78 (defined in the preceding paragraph)of the unselected memory cells. However, these voltage levels may vary.

FIG. 23A shows another embodiment of a memory cell 150 according to thepresent invention. The cell 150 includes a substrate 12 of a firstconductivity type, such as a p-type conductivity type, for example.Substrate 12 is typically made of silicon, but may comprise germanium,silicon germanium, gallium arsenide, carbon nanotubes, or othersemiconductor materials known in the art. The substrate 12 has a surface14. A first region 16 having a second conductivity type, such as n-type,for example, is provided in substrate 12 and is exposed at surface 14. Asecond region 18 having the second conductivity type is also provided insubstrate 12, and is also exposed at surface 14. Second region 18 isspaced apart from the first region 16, as shown. First and secondregions 16 and 18 may be formed by an implantation process on thematerial making up substrate 12, according, to any of implantationprocesses known and typically used in the art. Alternatively, a solidstate diffusion process may be used to form first and second regions 16and 18.

A buried layer 22 of the second conductivity type is also provided inthe substrate 12, buried in the substrate 12, as shown. Buried layer 22may also be formed by an ion implantation process on the material ofsubstrate 12. Alternatively, buried layer 22 can be grown epitaxially. Afloating body region 24 of the substrate 12 having a first conductivitytype, such as a p-type conductivity type, is bounded by surface, firstand second regions 16, 18, insulating layers 26 and buried layer 22.Insulating layers 26 shallow trench isolation (STI)), may be made ofsilicon oxide, for example. Insulating layers 26 insulate cell 150 fromneighboring cells 150 when multiple cells 150 are joined in an array 180to make a memory device as illustrated in FIG. 24. A gate 60 ispositioned in between the regions 16 and 18, and above the surface 14.The gate 60 is insulated from surface 14 by an insulating layer 62.Insulating layer 62 may be made of silicon oxide and/or other dielectricmaterials, including high-K dielectric materials, such as, but notlimited to, tantalum peroxide, titanium oxide, zirconium oxide, hafniumoxide, and/or aluminum oxide. The gate 60 may be made of polysiliconmaterial or metal gate electrode, such as tungsten, tantalum, titaniumand their nitrides.

Cell 150 further includes word line (WL) terminal 70 electricallyconnected to gate 60, source line (SL) terminal 72 electricallyconnected to one of regions 16 and 18 (connected to 16 as shown, butcould, alternatively, be connected to 18), bit line (BL) terminal 74electrically connected to the other of regions 16 and 18, buried well(BW) terminal 76 electrically connected to buried layer 22, andsubstrate terminal 78 electrically connected to substrate 12 at alocation beneath buried layer 22. Contact to buried well region canalternatively be made through region 20 having a second conductivitytype, and which is electrically connected to buried well region 22,while contact to substrate region 12 can alternatively be made throughregion 28 having a first conductivity type, and which is electricallyconnected to substrate region 12, as shown in FIG. 23B.

In another embodiment, the memory cell 150 may be provided with p-typeconductivity type as the first conductivity type and n-type conductivitytype as the second conductivity type.

As shown in FIG. 25, inherent in this embodiment of the memory cell 150are n-p-n bipolar devices 130 a, 130 b formed by buried well region 22,floating body 24, and SL and BL regions 16, 18. The memory celloperations will be described as follows. As will be seen, the operationprinciples of this embodiment of the memory cell 150 will follow thedescriptions above, where the bias applied, on the n-type substrateterminal 78 for the above described memory cell 50 is now applied, tothe n-type buried well terminal 76 of cell 150. The p-type substrate 12of the current embodiment of the memory cell 150 will be grounded,reverse biasing the p-n junction between substrate 12 and buried welllayer 22, thereby preventing any leakage current between substrate 12and buried, well layer 22.

A holding operation can be performed by applying a positive back bias tothe BW terminal 76 while grounding terminal 72 and/or terminal 74. Iffloating body 24 is positively charged (i.e. in a state “1”), thebipolar transistor formed by SL region 16, floating body 24, and buriedwell region 22 and bipolar transistor formed by BL region 18, floatingbody 24, and buried well region 22 will be tinned on.

A fraction of the bipolar transistor current will then flow intofloating region 24 (usually referred to as the base current) andmaintain the state “1” data. The efficiency of the holding operation canbe enhanced by designing the bipolar devices 130 a, 130 b formed byburied well layer 22, floating region 24, and regions 16/18 to be alow-gum bipolar device, where the bipolar gain is defined as the ratioof the collector current flowing out of BW terminal 76 to the basecurrent flowing into the floating region 24.

For memory cells in state “0” data, the bipolar devices 130 a, 130 bwill not be turned on, and consequently no base hole current will flowinto floating region 24. Therefore, memory cells in state “0” willremain in state “0”.

The holding operation can be performed in mass, parallel manner as theBW terminal 76 (functioning as back bias terminal) is typically sharedby all the cells 150 in the memory array 180, or at least by multiplecells 150 in a segment of the array 180. The BW terminal 76 can also besegmented to allow independent control of the applied bias on a selectedportion of the memory array 180. Also, because BW terminal 76 is notused for memory address selection, no memory cell access interruptionoccurs due to the holding operation.

An example of the bias conditions applied to cell 150 to carry out aholding operation includes: zero voltage is applied to BL terminal 74,zero voltage is applied to SL terminal 72, zero or negative voltage isapplied to WL terminal 70, a positive voltage is applied to the BWterminal 76, and zero voltage is applied to substrate terminal 78. Inone particular non-limiting embodiment, about 0.0 volts is applied toterminal 72, about 0.0 volts is applied to terminal 74, about 0.0 voltsis applied to terminal 70, about +1.2 volts is applied to terminal 76,and about 0.0 volts is applied to terminal 78. However, these voltagelevels may vary.

A read operation can be performed on cell 150 by applying the followingbias conditions: a positive voltage is applied to the BW terminal 76,zero voltage is applied to SL terminal 72, a positive voltage is appliedto the selected BL terminal 74, and a positive voltage greater than thepositive voltage applied to the selected BL terminal 74 is applied tothe selected WL terminal 70, while zero voltage is applied to substrateterminal 78. When cell 150 is in an array 180 of cells 150, theunselected BL terminals 74 (e.g., 74 b, 74 n) will remain at zerovoltage and the unselected WL terminals 70 (e.g., 70 n and any other WLterminals 70 not connected to selected cell 150 a) will remain at zeroor negative voltage. In one particular non-limiting embodiment, about0.0 volts is applied to terminal 72, about +0.4 volts is applied to theselected terminal 74 a, about +1.2 volts is applied to the selectedterminal 70 a, about +1.2 volts is applied to terminal 76, and about 0.0volts is applied to terminal 78, as illustrated in FIG. 26. Theunselected terminals 74 remain at 0.0 volts and the unselected terminal70 remain at 0.0 volts as illustrated in FIG. 26. However, these voltagelevels ruin vary while maintaining the relative relationships betweenvoltage levels as generally described above. As a result of the biasconditions applied as described, the unselected memory cells (150 b, 150c and 150 d) will be at holding mode, maintaining the states of therespective floating bodies 24 thereof. Furthermore, the holdingoperation does not interrupt the read operation of the selected memorycell 150 a.

To write “0” to cell 150, a negative bias is applied to SL terminal 72,zero or negative voltage is applied to WL terminal 70, zero or positivevoltage is applied to 8W terminal 76, and zero voltage is applied tosubstrate terminal 78. The SL terminal 72 for the unselected cells 150that are not commonly connected to the selected cell 150 a will remaingrounded. Under these conditions the p-n-junctions (junction between 24and 16 and between 24 and 18) are forward-biased, evacuating any holesfrom the floating, body 24. In one particular non-limiting embodiment,about −2.0 volts is applied to terminal 72, about −1.2 volts is appliedto terminal 70, about +1.2 volts is applied to terminal 76, and about0.0 volts is applied to terminal 78. However, these voltage levels mayvary, while maintaining the relative relationships between the chargesapplied, as described above.

The bias conditions for all the unselected cells are the same since thewrite “0” operation only involves applying a negative voltage to the SLterminal 72 (thus to the entire row). As can be seen, the unselectedmemory cells will be in holding operation, with both BL and SL terminalsat about 0.0 volts.

Thus the holding; operation does not interrupt the write “0” operationof the memory cells. Furthermore, the unselected memory cells willremain in holding, operation during a write “0” operation.

An alternative write “0” operation, which, unlike the previous write “0”operation described above, allows for individual bit write, can beperformed by applying a positive voltage to WL terminal 70, a negativevoltage to BL terminal 74, zero or positive voltage to SL terminal 72,zero or positive voltage to BW terminal 76, and zero voltage tosubstrate terminal 78. Under these conditions, the floating body 24potential will increase through capacitive coupling from the positivevoltage applied to the WL terminal 70. As a result of the floating body24 potential increase and the negative voltage applied to the BLterminal 74, the p-n junction (junction between 24 and 16) isforward-biased, evacuating any holes from the floating body 24. Theapplied bias to selected WL terminal 70 and selected BL terminal 74 canpotentially affect the states of the unselected memory cells 150 sharingthe same WL or BL terminal as the selected memory cell 150. To reduceundesired write “0” disturb to other memory cells 150 in the memoryarray 180, the applied potential can be optimized as follows if thefloating body 24 potential of state “1” is referred to as V_(FB1), thenthe voltage applied to the WL terminal 70 is configured to increase thefloating body 24 potential by V_(FB1)/2 while −V_(FB1)/2 is applied toBL terminal 74. This will minimize the floating, body 24 potentialchange in the unselected cells 150 in state “1” sharing the same BLterminal as the selected cell 150 from V_(FB1) to V_(FB1)/2. For memorycells 150 in state “0” sharing the same WL terminal as the selected cell150, if the increase in floating body 24 potential is sufficiently high(i.e., at least V_(FB)/3, see below), then both n-p-n bipolar devices130 a and 130 b will not be turned on or so that the base hold currentis low enough that it does not result in an increase of the floatingbody 24 potential over the time during which the write operation iscarried out (write operation time). It has been determined according tothe present invention that a floating body 24 potential increase ofV_(FB)/3 is low enough to suppress the floating body 24 potentialincrease. A positive voltage can be applied to SL terminal 72 to furtherreduce the undesired write “0” disturb on other memory cells 150 in thememory array. The unselected cells will remain at holding state, i.e.zero or negative voltage applied to WL terminal 70 and zero voltageapplied to BL terminal 74. The unselected cells 150 not sharing the sameWL or BL terminal as the selected cell 150 will remain at holding state,i.e., with zero or negative voltage applied to unselected WL terminaland zero voltage applied to unselected BL terminal 74.

In one particular non-limiting embodiment, for the selected cell 150 apotential of about 0.0 volts is applied to terminal 72, a potential ofabout −0.2 volts is applied to terminal 74, a potential of about +0.5volts is applied to terminal 70, about +1.2 volts is applied to terminal76, and about 0.0 volts is applied to terminal 78. For the unselectedcells not sharing the same WL terminal or BL terminal with the selectedmemory cell 50, about 0.0 volts is applied to terminal 72, about 0.0volts is applied to terminal 74, about 0.0 volts is applied to terminal70, about +1.2 volts is applied to terminal 76, and about 0.0 volts isapplied to terminal 78. FIG. 27 shows the bias conditions for theselected and unselected memory cells 150 in memory array 180. Howeverthese voltage levels may vary.

An example of the bias conditions applied to a selected memory cell 150during a write “0” operation is illustrated in FIGS. 28A-28B. An exampleof the bias conditions applied to the unselected memory cells 150 duringwrite “0” operations are shown in FIGS. 28C-28H. The bias conditions forunselected memory cells 150 sharing the same row as selected memory cell150 a (e.g. memory cell 150 b in FIG. 27) are shown in FIGS. 28C-28D.The bias conditions for unselected memory cells 150 sharing the samecolumn as selected memory cell 150 a (e.g. memory cell 150 c in FIG. 27)are shown in FIGS. 28E-28H. The bias conditions for unselected memorycells 150 not sharing the same row or the same column as the selectedmemory cell 150 a (e.g. memory cell 150 d in FIG. 27) are shown in FIGS.28G-28H.

During the write “0” operation (individual hit write “0” operationdescribed above) in memory cell 150, the positive back bias applied tothe BW terminal 76 of the memory cells 150 is necessary to maintain thestates of the unselected cells 150, especially those sharing the samerow or column as the selected cell 150 a, as the bias condition canpotentially alter the states of the memory cells 150 without theintrinsic bipolar device 130 (formed by buried well region 22, floatingbody 24, and, region as 18) re-establishing the equilibrium condition.Furthermore, the holding operation does not interrupt the write “0”operation of the memory cells 150.

A write “1” operation can be performed on memory cell 150 through animpact ionization mechanism or a band-to-band tunneling mechanism, asdescribed for example in “A Design of a Capacitorless 1T-DRAM Cell UsingGate-Induced Drain Leakage (GIDL) Current for Low-power and High-speedEmbedded Memory”. Yoshida et al., pp. 913-918 International ElectronDevices Meeting, 2003, which was incorporated by reference above.

An example of bias conditions applied to selected memory cell 5150 aunder a hand-to-hand tunneling, write “1” operation is furtherelaborated and is shown in FIG. 29. The negative bias applied to the WLterminal 70 a and the positive bias applied to the BL terminal 74 a willresult in hole injection to the floating body 24. The positive biasapplied to the BW terminal 76 a will maintain the resulting positivecharge on the floating, body 24 as discussed above. The unselected cells150 will remain at the holding mode, with zero or negative voltageapplied to the unselected WL terminal 70 (in FIG. 27, 70 n and all otherWL terminals 70 not connected to cell 150 a) and zero voltage is appliedto the unselected BL terminal 74 b, 74 n and all other terminals 74 notconnected to cell 150 a). The positive bias applied to the BW terminal76 employed for the holding operations does not interrupt the write “1”operation of the selected memory cell(s). At the same time, theunselected memory cells 150 will remain in a holding operation during awrite “1” operation on a selected memory cell 150.

A multi-level operation can also be perforated on memory cell 150. Aholding operation to maintain the multi-level states of memory cell 50is described with reference to FIG. 6. The relationship between thefloating body 24 current for different floating body 24 potentials asfunction of the BW terminal 76 potential (FIG. 613) is similar to thatof floating body 24 current as a function of the substrate terminal 78potential (FIG. 6A). As indicated in FIG. 6B, for different floatingbody potentials, at a certain BW terminal 76 potential V_(HOLD), thecurrent flowing into floating body 24 is balanced by the junctionleakage between floating body 24 and regions 16 and 18. The differentfloating body 24 potentials represent different charges used torepresent different states of memory cell 150. This shows that differentmemory states can be maintained by using the holding/standby operationdescribed here.

A multi-level write operation without alternate write and readoperations on memory cell 150 is now described. To perform thisoperation, zero voltage is applied to SL terminal 72, a positive voltageis applied to WL terminal 70, a positive voltage (back bias) is appliedto BW terminal 76, and zero voltage is applied to substrate terminal 78,while the voltage of BL terminal 74 is ramped up. These bias conditionswill result in a hole injection to the floating body 24 through animpact ionization mechanism. The state of the memory cell 150 can besimultaneously read for example by monitoring the change in the cellcurrent through a read circuitry 90 coupled to the source line 72. Thecell current measured in the source line direction (where source linecurrent equals bit, line current plus BW current and the currents aremeasured in the directions from buried well to source line and from bitline to source line) is a cumulative cell current of all memory cells150 which share the same source line 72 (e.g. see FIGS. 16A-16C forexamples of monitoring cell current in the source line direction. Thesame monitoring scheme can be applied to memory array 80 as well asmemory array 180). As a result, only one memory cell 150 sharing thesame source line 72 can be written. This ensures that the change in thecumulative cell current is a result of the write operation on theselected memory cell 150.

The applied bias conditions will result in hole injection to floatingbody 24 through an impact ionization mechanism. FIG. 17 shows theresulting increase of the floating body potential 24 over time. Once thechange in cell current reaches the desired level associated with a stateof the memory cell 150 (levels are schematically represented in FIG.17), the voltage applied to BL terminal 74 can be removed. By applying apositive voltage to BW terminal 76, the resulting floating body 24potential is maintained through base hole current flowing into floatingbody 24. In this manner the multi-level write operation can be performedwithout alternate write and read operations.

In a similar manner, the rut-level write operation using impactionization mechanism can also be performed by ramping the write currentapplied to BL terminal 74 instead of ramping the BL terminal 74 voltage.

In yet another embodiment, a multi-level write operation can beperformed through a band-to-band tunneling, mechanism by ramping thevoltage applied to BL terminal 74, while applying zero voltage to SLterminal 72, a negative voltage to WL terminal 70, a positive voltage toBW terminal 76, and zero voltage to substrate terminal 78. The potentialof the floating body 24 will increase as a result of the band-to-bandtunneling mechanism. The state of the memory cell 50 can besimultaneously read for example by monitoring the change in the cellcurrent through a read circuitry 90 coupled to the source line 72. Oncethe change in the cell current reaches the desired level associated witha state of the memory cell, the voltage applied to BL terminal 74 can beremoved if positive voltage is applied to substrate terminal 78, theresulting floating body 24 potential is maintained through base holecurrent flowing into floating, body 24. In this manner, the multi-levelwrite operation can be performed without alternate write and readoperations.

Similarly, the multi-level write operation using baud-to-band tunnelingmechanism can also be performed by ramping the write current applied toBL terminal 74 instead of ramping the voltage applied to BL terminal 74.

Similarly, at read while programming operation can be performed bymonitoring, the change in cell current in the bit line 74 direction(where bit line current equals SL current plus BW current) through areading circuitry 90 coupled to the bit line 74, for example as shown inFIG. 18A. For the current ramp operation, the voltage at the hit line 74can be sensed, rather than sensing the cell current. The bit linevoltage can be sensed, for example, using a voltage sensing, circuitry,see FIG. 18B.

Another embodiment of memory cell 150 operations, which utilizes thesilicon controlled rectifier (SCR) principle, has been disclosed in U.S.patent application Ser. No. 12/533,661, filed Jul. 31, 2009, which wasincorporated by reference, in its entirety, above.

FIGS. 30 and 31 show another embodiment of the memory cell 50 described,in this invention, in this embodiment, cell 50 has a fin structure 52fabricated on substrate 12 having a first conductivity type (such asn-type conductivity type) so as to extend from the surface of thesubstrate to form a three-dimensional structure, with fin 52 extendingsubstantially perpendicularly to, and above the top surface of thesubstrate 12. Fin structure 52 includes first and second regions 16, 18having the first conductivity type. The floating body region 24 ishounded by the top surface of the fin 52, the first and second regions16, 18 and insulating layers 26 (insulating layers 26 can be seen in thetop view of FIG. 34) insulating layers 26 insulate cell 50 fromneighboring cells 50 when multiple cells 50 are joined to make a memorydevice (array 80). The floating body region 24 is conductive having asecond conductivity type (such as p-type conductivity type) and may beformed through an ion implantation process or may be grown epitaxially.Fin 52 is typically made of silicon, but may comprise germanium, silicongermanium, gallium arsenide, carbon nanotubes, or other semiconductormaterials known in the art.

Memory cell device 50 further includes gates 60 on two opposite sides ofthe floating substrate region 24 as shown in FIG. 30. Alternatively,gates 60 can enclose three sides of the floating substrate region 24 asshown in FIG. 31. Gates 60 are insulated from floating body 24 byinsulating layers 62. Gates 60 are positioned between the first andsecond regions 16, 18, adjacent to the floating body 24.

Device 50 includes several terminals: word line (WL) terminal 70, sourceline (SL) terminal 72, bit line (BL) terminal 74, and substrate terminal78. Terminal 70 is connected to the gate 60. Terminal 72 is connected tofirst region 16 and terminal 74 is connected to second region 18.Alternatively, terminal 72 can be connected to second region 18 andterminal 74 can be connected to first region 16. Terminal 7$ isconnected to substrate 11

FIGS. 32 and 33 show another embodiment of memory cell 150 described inthis invention. In this embodiment, cell 150 has a fin structure 52fabricated on substrate 12, so as to extend from the surface of thesubstrate to form a three-dimensional structure, with fin 52 extendingsubstantially perpendicularly to, and above the top surface of thesubstrate 12. Fin structure 52 is conductive and is built on buried welllayer 22. Region 22 may be formed by an ion implantation process on thematerial of substrate 12 or grown epitaxially. Buried well layer 22insulates the floating substrate region 24, which has a firstconductivity type (such as p-type conductivity type), from the bulksubstrate 12. Fin structure 52 includes first and second regions 16, 18having a second conductivity type (such as n-type conductivity type).Thus, the floating body region 24 is bounded by the top surface of thefin 52, the first and second regions 16, 18 the buried well layer 22,and insulating layers 26 (see FIG. 34). Insulating layers 26 insulatecell 150 from neighboring cells 150 when multiple cells 150 are joinedto make a memory device. Fin 52 is typically made of silicon, but maycomprise germanium, silicon germanium, gallium arsenide, carbonnanotubes, or other semiconductor materials known in the art.

Memory cell device 150 further includes gates 60 on two opposite sidesof the floating substrate region 24 as shown in FIG. 32. Alternatively,gates 60 can enclose three sides of the floating substrate region 24 asshown in FIG. 33. Gates 60 are insulated from floating hod 24 byinsulating layers 62. Gates 60 are positioned between the first andsecond regions 16, 18, adjacent to the floating body 24.

Device 150 includes several terminals: word line (WL) terminal 70,source line (SL) terminal 72, bit line (BL) terminal 74, buried well(BW) terminal 76 and substrate terminal 78. Terminal 70 is connected tothe gate 60. Terminal 72 is connected to first region 16 and terminal 74is connected to second region 18. Alternatively, terminal 72 can beconnected to second region. 18 and terminal 74 can be connected to firstregion 16. Terminal 76 is connected to buried layer 22 and terminal 78is connected to substrate 12.

FIG. 34 illustrates the top view of the memory cells 50/150 shown inFIGS. 30 and 32.

From the foregoing it can be seen that with the present invention, asemiconductor memory with electrically floating body is achieved. Thepresent invention also provides the capability of maintaining memorystates or parallel non-algorithmic periodic, refresh operations. As aresult, memory operations can be performed in an uninterrupted manner.While the foregoing written description of the invention enables one ofordinary skill to make and use what is considered presently to be thebest mode thereof, those of ordinary skill will understand andappreciate the existence of variations, combinations, and equivalent ofthe specific embodiment, method, and examples herein. The inventionshould therefore not be limited by the above described embodiment,method, and examples, but by all embodiments and methods within thescope and spirit of the invention as claimed.

What is claimed is:
 1. A semiconductor memory cell comprising: afloating body region configured to be charged to a level indicative of astate of the memory cell; a first region in electrical contact with saidfloating body region, located at a surface of said floating body region;and a second region in electrical contact with said floating bodyregion, located below said floating body region, configured to injectcharge into said floating body region to maintain said state of thememory cell; wherein an amount of charge injected into said floatingbody is a function of a charge stored in said floating body region. 2.The semiconductor memory cell of claim 1, wherein said floating body hasa first conductivity type selected from a p-type conductivity type andan n-type conductivity type; said first region has a second conductivitytype selected from said p-type and n-type conductivity types, saidsecond conductivity type being different from said first conductivitytype; and said second region has said second conductivity type.
 3. Thesemiconductor memory cell of claim 2, further comprising a third regionhaving said second conductivity type, said third region being spacedapart from said first region.
 4. The semiconductor memory cell of claim1, further comprising a gate region above said floating body.
 5. Thesemiconductor memory cell of claim 1, further comprising: a terminalconnected to said first region; and a back bias terminal connected tosaid second region.
 6. The semiconductor memory cell of claim 1, whereinapplying a voltage to said second region offsets charge leakage out ofsaid floating body.
 7. The semiconductor memory cell of claim 6, whereinsaid voltage applied to said second region is a constant positivevoltage bias.
 8. The semiconductor memory cell of claim 6, wherein saidvoltage applied to said second region is a periodic pulse of positivevoltage.
 9. A semiconductor memory array comprising: a plurality ofsemiconductor memory cells arranged in a matrix of rows and columns,wherein each said semiconductor memory cell includes: a floating bodyregion configured to be charged to a level indicative of a state of thememory cell; a first region in electrical contact with said floatingbody region; a second region in electrical contact with said floatingbody region and spaced apart from said first region; and a gatepositioned between said first and second regions; wherein a back-biasregion is commonly connected to at least two of said memory cells, andwhen a first memory cell of said at least two of said memory cells is ina first state and a second memory cell of said at least two of saidmemory cells is in a second state, application of a bias via saidback-bias region maintains said first memory cell in said first stateand said second memory cell in said second state.
 10. The semiconductormemory array of claim 9, wherein each said first region has a firstconductivity type selected from a p-type conductivity type and an n-typeconductivity type; each said floating body region has a secondconductivity type selected from said p-type and n-type conductivitytypes, said second conductivity type being different from said firstconductivity type; each said second region has said first conductivitytype; and said back bias region comprises a substrate having said firstconductivity type.
 11. The semiconductor memory array of claim 9,wherein said back-bias region is commonly connected to all of saidmemory cells in said memory array.
 12. The semiconductor memory array ofclaim 9, wherein said back-bias region is segmented to allow independentcontrol of bias applied to a selected portion of said memory array. 13.The semiconductor array of claim 9, wherein application of voltage tosaid back bias region maintains current states of each said memory cellconnected thereto.
 14. The semiconductor array of claim 13, wherein saidapplication of voltage is applied as a constant voltage bias.
 15. Thesemiconductor array of claim 13, wherein said application of voltage isapplied as a periodic pulse of voltage bias.
 16. The semiconductor arrayof claim 9, wherein a maximum potential that can be held by any one ofsaid memory cells connected to said back bias region is increased bysaid application of voltage to said back bias region, resulting in arelatively larger memory window.
 17. A semiconductor memory cellcomprising: a bipolar device having a floating base region, a collector,and an emitter, wherein: a state of said memory cell is stored in saidfloating base region, said collector is located below said floating baseregion; said state of said memory cell is maintained through a back-biasapplied to said collector.
 18. The semiconductor memory cell of claim17, wherein said floating base region has a first conductivity typeselected from a p-type conductivity type and an n-type conductivitytype; said emitter has a second conductivity type selected from saidp-type and n-type conductivity types, said second conductivity typebeing different from said first conductivity type; and said collectorhas said second conductivity type.
 19. The semiconductor memory cell ofclaim 17, wherein said back-bias applied to said collector is a constantvoltage bias.
 20. The semiconductor memory cell of claim 17, whereinsaid back-bias applied to said collector is a periodic pulse of voltage.